Gallium Nitride on Sapphire templates

GaN template may be used as a substrate for III-V nitride epitaxial growth by MBE, MOCVD and CVD.

The following GaN epi on Sapphire are available

· Undoped GaN

· n-GaN, Si-doped

· p-GaN, Mg-doped

· i-GaN, high resistivity, Zn-compensated

· a-plane GaN on r-plane Sapphire

Applications.

· Ideal substrates for GaN homoepitaxial growth and device manufacturing.

· Excellent material for production, product development and fundamental research

· New type of substrate for GaN-based Blue/Green/White/UV LEDs.

· Substrates for III-V nitride epitaxial growth by MBE, MOCVD and CVD.

· Thick GaN is enabling new applications like High Brightness LEDs manufactured with Laser Lift Off

Contact TDI

Undoped GaN Typical Properties

*Template type*	5	10	15	20	30	40
Average thickness of GaN, microns	3-7	7-12	12-17	17-25	25-35	35-45
FWHM of x-ray RC omega-scan (00.2), arcsec	<400	<350	<320	<300	<270	<250
Typical dislocation density, cm^-2	(2-7)E8		2E8 – 5E7
Typical electron mobility, cm²/V sec	>500
Doping	Undoped
Concentration Nd-Na, cm^-³*	<9E16
GaN Conductivity	n-type
Thickness standard deviation	<10%
Typical sapphire substrate	c-plane, single side polished **
Typical diameter, inch	2***
Surface of GaN	As grown, typical Rms<1nm****
GaN orientation	(0001)

n-type GaN, Si-doped Typical Properties

*Template type*	5	10	15	20
Average thickness of GaN, microns	3-7	7-12	12-17	17-25
FWHM of x-ray RC omega-scan (0002), arcsec	<400	<350	<320	<300
Typical dislocation density, cm^-2	(2-7)E8		2E8 – 5E7
Doping	Si, doping profile see below
Typical concentration Nd-Na, cm^-³*	(1-3)E18
GaN Conductivity	n-type
Thickness standard deviation	<10%
Typical sapphire substrate	c-plane, single side polished **
Typical diameter, inch	2***
Surface of GaN	As grown, typical Rms<1nm****
GaN orientation	(0001)

For n-GaN templates, Si-doping profile can be customized depending on application. Here are typical Si-doping profiles for different applications.

Uniform doping GaN-based LEDs	Graded doping GaN-based HB LEDs	Sandwiched doping GaN-based HB LEDs both sides contacts
	Applications

p-type GaN, Mg-doped Typical Properties

*Template type*	5	10
Average thickness of GaN, microns	2-5	5-10
FWHM of x-ray RC omega-scan (0002), arcsec	<450	<400
Doping	Mg	Mg
Concentration Na-Nd, cm^-³*	Option 1: (1-9)E17 Option 2: (1-6)E18
GaN Conductivity	p-type*
Thickness standard deviation	<10%
Typical sapphire substrate	c-plane, single side polished **
Typical diameter, inch	2***
Surface of GaN	As grown, typical Rms<1nm****
GaN orientation	(0001)
Treatment	As grown or annealed

A Zn-compensated, high resistivity GaN buffer layer can be introduced

between sapphire and p-GaN layer

i-type GaN, high resistivity, Zn-compensated Typical Properties

*Template type*	5	10
Average thickness of GaN, microns	2-5	5-10
FWHM of x-ray RC omega-scan (0002), arcsec	<450	<400
Doping	Zn	Zn
Resistivity, Ohm cm (300 K)	>1E5
Thickness standard deviation	<10%
Typical sapphire substrate	c-plane, single side polished **
Typical diameter, inch	2***
Surface of GaN	As grown, typical Rms<1nm****
GaN orientation	(0001)

* Measured by a CV meter with mercury probe

** Growth on Double Side Polished sapphire; on R-plane and A-plane sapphire is possible

*** 3-inch, and 4-inch diameter is also available

**** More rough surface at Rms = 2-5 nm can be also supplied

Two types of templates are available:

1. Standard grade, usable area >90%

2. Research grade, usable area >80%

Exclusion area – 2mm periphery region

Research grade templates of all types are supplied at reduced price subject of availability. Contact TDI for additional information, prices and availability of templates

Details of surface morphology and optical properties of GaN templates

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· Excellent material for production, product development and fundamental research

Typical sapphire substrate

Applications